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2DB1182Q-13 original picture
2DB1182Q-13 medium  picture
2DB1182Q-13 thumbnail  picture 2DB1182Q-13 thumbnail  picture
*Images are for reference only.

2DB1182Q-13

Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A

Manufacturer:
Diodes Incorporated
Package:
TO-252-3
Packing:
Reel
Datasheet:
2DB1182Q-13
Delivery services:
Payment method:
In stock:
1025
Order quantity:

Specifications

Manufacturer:
Diodes Incorporated
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Transistor Polarity:
PNP
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
32 V
Collector- Base Voltage VCBO:
40 V
Emitter- Base Voltage VEBO:
5 V
Collector-Emitter Saturation Voltage:
800 mV
Maximum DC Collector Current:
3 A
Pd - Power Dissipation:
10 W
Gain Bandwidth Product fT:
110 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Qualification:
AEC-Q101
Series:
2DB11
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Diodes Incorporated
DC Collector/Base Gain hfe Min:
120
DC Current Gain hFE Max:
270 at - 500 mA, - 3 V
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
2500
Subcategory:
Transistors
Technology:
Si
Unit Weight:
0.011640 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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