2N6491 TIN/LEAD

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

80 V

Collector- Base Voltage VCBO:

90 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

1.3 V

Maximum DC Collector Current:

-

Pd - Power Dissipation:

1.8 W

Gain Bandwidth Product fT:

5 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

2N6491

Packaging:

Bulk

Brand:

Central Semiconductor

Continuous Collector Current:

15 A

DC Collector/Base Gain hfe Min:

20

DC Current Gain hFE Max:

150

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

50

Subcategory:

Transistors

Technology:

Si