2SB1565F

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

Mounting Style:

Through Hole

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

7 V

Maximum DC Collector Current:

3 A

Pd - Power Dissipation:

2 W

Gain Bandwidth Product fT:

15 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Brand:

ROHM Semiconductor

Continuous Collector Current:

- 3 A

DC Collector/Base Gain hfe Min:

160 at 500 mA, 5 V

DC Current Gain hFE Max:

160 at 500 mA, 5 V

Height:

8 mm

Length:

10 mm

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si

Width:

4.5 mm