- Manufacturer:
- Diodes Incorporated
- Product Category:
- Bipolar Transistors - BJT
- Transistor Polarity:
- NPN
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 32 V
- Collector- Base Voltage VCBO:
- 40 V
- Emitter- Base Voltage VEBO:
- 5 V
- Maximum DC Collector Current:
- 500 mA
- Pd - Power Dissipation:
- 200 mW
- Gain Bandwidth Product fT:
- 250 MHz
- Maximum Operating Temperature:
- + 150 C
- Brand:
- Diodes Incorporated
- DC Collector/Base Gain hfe Min:
- 180 at 100 mA, 3 V
- Product Type:
- BJTs - Bipolar Transistors
- Subcategory:
- Transistors
- Technology:
- Si
