2SC2712-GR

Manufacturer:

Toshiba

Product Category:

Bipolar Transistors - BJT

Mounting Style:

SMD/SMT

Package / Case:

TO-236-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

250 mV

Maximum DC Collector Current:

150 mA

Pd - Power Dissipation:

150 mW

Gain Bandwidth Product fT:

80 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 125 C

Series:

2SC2712

Brand:

Toshiba

Continuous Collector Current:

150 mA

DC Collector/Base Gain hfe Min:

70

DC Current Gain hFE Max:

700

Height:

1.1 mm

Length:

2.9 mm

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

10000

Subcategory:

Transistors

Technology:

Si

Width:

1.5 mm