2SD2150T100S

Manufacturer:

STMicroelectronics

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

20 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

6 V

Maximum DC Collector Current:

3 A

Pd - Power Dissipation:

2 W

Gain Bandwidth Product fT:

290 MHz

Maximum Operating Temperature:

+ 150 C

Brand:

STMicroelectronics

DC Collector/Base Gain hfe Min:

270 at 100 mA, 2 V

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si