- Part Number
- 2SK536-TB-E
- Manufacturer
- ON Semiconductor
- Description
- MOSFET N-CH 50V 0.1A
- Package
- TO-236-3, SC-59, SOT-23-3
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 50V
- Current - Continuous Drain (Id) @ 25°C
- 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- -
- Gate Charge (Qg) (Max) @ Vgs
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 15pF @ 10V
- Vgs (Max)
- ±12V
- FET Feature
- -
- Power Dissipation (Max)
- 200mW (Ta)
- Rds On (Max) @ Id, Vgs
- 20 Ohm @ 10mA, 10V
- Operating Temperature
- 125°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- SC-59
- Package / Case
