AGR19030EF

Manufacturer:

Qorvo

Product Category:

RF MOSFET Transistors

Transistor Polarity:

N-Channel

Technology:

Si

Vds - Drain-Source Breakdown Voltage:

65 V

Operating Frequency:

930 MHz to 960 MHz

Gain:

16 dB

Output Power:

6 W

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Brand:

Qorvo

Channel Mode:

Enhancement

Configuration:

Single

Height:

3.48 mm

Length:

20.32 mm

Pd - Power Dissipation:

87.5 W

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Type:

RF Power MOSFET

Vgs - Gate-Source Voltage:

15 V

Vgs th - Gate-Source Threshold Voltage:

4.8 V

Width:

10.16 mm