- Part Number
- APTM100A23SCTG
- Manufacturer
- Microsemi Corporation
- Description
- MOSFET 2N-CH 1000V 36A SP4
- Package
- SP4
- FET Feature
- Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 36A
- Rds On (Max) @ Id, Vgs
- 270 mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs
- 308nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 8700pF @ 25V
- Power - Max
- 694W
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Mounting Type
- Chassis Mount
- Package / Case
- SP4
- Supplier Device Package
