- Manufacturer:
- Broadcom Limited
- Product Category:
- RF JFET Transistors
- Transistor Type:
- EpHEMT
- Technology:
- GaAs
- Operating Frequency:
- 2 GHz
- Gain:
- 16 dB
- Vds - Drain-Source Breakdown Voltage:
- 7 V
- Vgs - Gate-Source Breakdown Voltage:
- - 5 V to 1 V
- Id - Continuous Drain Current:
- 500 mA
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 1.5 W
- Mounting Style:
- SMD/SMT
- Package / Case:
- SOT-89
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Packaging:
- MouseReel
- Brand:
- Broadcom / Avago
- Configuration:
- Single Dual Source
- Forward Transconductance - Min:
- 1300 mmho
- NF - Noise Figure:
- 1.5 dB
- P1dB - Compression Point:
- 27 dBm
- Product:
- RF JFET
- Product Type:
- RF JFET Transistors
- Factory Pack Quantity:
- 3000
- Subcategory:
- Transistors
- Type:
- GaAs EpHEMT
- Unit Weight:
- 0.004603 oz
