- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- Through Hole
- Package / Case:
- TO-262-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 40 V
- Id - Continuous Drain Current:
- 180 A
- Rds On - Drain-Source Resistance:
- 3.7 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 4 V
- Qg - Gate Charge:
- 150 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 175 C
- Pd - Power Dissipation:
- 200 W
- Channel Mode:
- Enhancement
- Qualification:
- AEC-Q101
- Packaging:
- Tube
- Brand:
- Infineon Technologies
- Configuration:
- Single
- Fall Time:
- 58 ns
- Height:
- 9.45 mm
- Length:
- 10.2 mm
- Product Type:
- MOSFET
- Rise Time:
- 110 ns
- Factory Pack Quantity:
- 1000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Typical Turn-Off Delay Time:
- 36 ns
- Typical Turn-On Delay Time:
- 18 ns
- Width:
- 4.5 mm
- Unit Weight:
- 0.084199 oz
