BCW33LT1G

Manufacturer:

Infineon

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

32 V

Collector- Base Voltage VCBO:

32 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

100 mA

Pd - Power Dissipation:

300 mW

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Brand:

Infineon Technologies

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si