BCW61C /T3

Manufacturer:

Infineon

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

32 V

Collector- Base Voltage VCBO:

32 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

200 mA

Pd - Power Dissipation:

250 mW

Gain Bandwidth Product fT:

100 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Brand:

Infineon Technologies

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si