BD912

Manufacturer:

onsemi

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

100 V

Collector- Base Voltage VCBO:

100 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

15 A

Pd - Power Dissipation:

90 W

Gain Bandwidth Product fT:

3 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Brand:

onsemi / Fairchild

DC Collector/Base Gain hfe Min:

40 at 500 mA, 4 V

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si