- Manufacturer:
- NXP
- Product Category:
- Bipolar Transistors - BJT
- Mounting Style:
- Through Hole
- Package / Case:
- TO-92-3
- Transistor Polarity:
- NPN
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 15 V
- Collector- Base Voltage VCBO:
- 40 V
- Emitter- Base Voltage VEBO:
- 4.5 V
- Maximum DC Collector Current:
- 100 mA
- Pd - Power Dissipation:
- 500 mW
- Gain Bandwidth Product fT:
- 500 MHz
- Minimum Operating Temperature:
- - 65 C
- Maximum Operating Temperature:
- + 150 C
- Brand:
- NXP Semiconductors
- DC Collector/Base Gain hfe Min:
- 40
- DC Current Gain hFE Max:
- 40 at 10 mA, 1 V
- Height:
- 5.2 mm
- Length:
- 4.8 mm
- Product Type:
- BJTs - Bipolar Transistors
- Factory Pack Quantity:
- 1000
- Subcategory:
- Transistors
- Technology:
- Si
- Width:
- 4.2 mm
- Part # Aliases:
- BF370,112
