BF822 T/R

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

250 V

Collector- Base Voltage VCBO:

250 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

50 mA

Pd - Power Dissipation:

250 mW

Gain Bandwidth Product fT:

60 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Brand:

ROHM Semiconductor

DC Collector/Base Gain hfe Min:

50 at 25 mA, 20 V

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si