- Manufacturer:
- Diodes Incorporated
- Product Category:
- Bipolar Transistors - BJT
- Transistor Polarity:
- NPN
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 15 V
- Collector- Base Voltage VCBO:
- 20 V
- Emitter- Base Voltage VEBO:
- 2.5 V
- Maximum DC Collector Current:
- 120 mA
- Pd - Power Dissipation:
- 400 mW
- Gain Bandwidth Product fT:
- 9 GHz
- Minimum Operating Temperature:
- - 65 C
- Maximum Operating Temperature:
- + 150 C
- Brand:
- Diodes Incorporated
- DC Collector/Base Gain hfe Min:
- 60 at 40 mA, 8 V
- Product Type:
- BJTs - Bipolar Transistors
- Subcategory:
- Transistors
- Technology:
- Si
