The BSS123 is a specific part number for an N-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by multiple semiconductor companies, including ON Semiconductor and NXP Semiconductors. It is designed for low voltage, low power switching applications. Here are some key features of the BSS123:
1. N-Channel Enhancement Mode: The BSS123 is an N-channel MOSFET operating in the enhancement mode, which means it requires a positive gate voltage to allow current flow from the drain to the source.
2. Low Voltage Operation: It is designed for low voltage applications, typically up to 100 volts or lower.
3. Low On-Resistance: The MOSFET has a low on-resistance (RDS(on)) value, indicating minimal resistance when the device is fully conducting. This helps reduce power losses and improve overall efficiency.
4. Low Gate Threshold Voltage: The BSS123 has a low gate threshold voltage, typically around 1 to 2 volts, making it suitable for low-voltage control applications.
5. Small Signal Switching: It is optimized for small signal switching applications where low power consumption and fast switching speed are required.
6. Various Packages: The BSS123 is available in different packages, such as SOT-23, SOT-323, and SOT-363, providing options for different PCB mounting requirements.
The BSS123 is commonly used in various low-power switching applications, such as battery-powered devices, small signal amplifiers, level shifting circuits, and general-purpose switching circuits. Its low on-resistance, low voltage operation, and small package size make it suitable for applications where space and power efficiency are important. It is recommended to refer to the datasheet provided by the specific manufacturer for detailed specifications and application guidelines specific to the BSS123.
