The BSS123LT1G is a specific part number from ON Semiconductor. It refers to an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
Here are some key features and specifications of the BSS123LT1G:
1. MOSFET Type: The BSS123LT1G is an N-channel enhancement-mode MOSFET, which means it conducts current when a positive voltage is applied to the gate terminal.
2. Voltage Rating: The MOSFET has a maximum drain-source voltage rating of 100V, indicating the maximum voltage it can withstand in a circuit.
3. Current Handling: It has a maximum continuous drain current (ID) rating of 170mA, representing the maximum current the MOSFET can handle under specified conditions.
4. Low Threshold Voltage: The BSS123LT1G features a low threshold voltage (Vth) typically ranging from 0.8V to 2V, which enables efficient control of the MOSFET with low voltage signals.
5. Package Type: The "LT1G" at the end of the part number indicates the package type, which is a small SOT-23 surface-mount package. This package provides compact size and ease of assembly.
6. Application Range: The BSS123LT1G is commonly used in various applications, such as power management, switching circuits, level shifting, and low-power amplification.
The BSS123LT1G MOSFET offers a combination of low voltage operation, small size, and good switching characteristics, making it suitable for a wide range of applications where efficient power switching and control are required.
For detailed information on electrical characteristics, pin configuration, and application guidelines for the BSS123LT1G, it is recommended to refer to the official datasheet provided by ON Semiconductor.
