- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- SOT-23-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 100 V
- Id - Continuous Drain Current:
- 190 mA
- Rds On - Drain-Source Resistance:
- 2.4 Ohms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 1.4 V
- Qg - Gate Charge:
- 600 pC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 500 mW
- Channel Mode:
- Enhancement
- Qualification:
- AEC-Q101
- Packaging:
- Reel
- Brand:
- Infineon Technologies
- Configuration:
- Single
- Fall Time:
- 22 ns
- Forward Transconductance - Min:
- 410 mS
- Height:
- 1.1 mm
- Length:
- 2.9 mm
- Product Type:
- MOSFET
- Rise Time:
- 3.2 ns
- Factory Pack Quantity:
- 15000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Typical Turn-Off Delay Time:
- 7.4 ns
- Typical Turn-On Delay Time:
- 2.3 ns
- Width:
- 1.3 mm
- Part # Aliases:
- SP000870646 BSS123N H6327 BSS123NH6327XTSA1
- Unit Weight:
- 0.000282 oz
