- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- GaN
- Mounting Style:
- SMD/SMT
- Package / Case:
- SOT-89-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 600 V
- Id - Continuous Drain Current:
- 90 mA
- Rds On - Drain-Source Resistance:
- 45 Ohms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 1 W
- Channel Mode:
- Enhancement
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Brand:
- Infineon Technologies
- Configuration:
- Single
- Fall Time:
- 38 ns
- Height:
- 1.5 mm
- Length:
- 4.5 mm
- Product:
- MOSFET Small Signal
- Product Type:
- MOSFET
- Rise Time:
- 38 ns
- Series:
- BSS225
- Factory Pack Quantity:
- 1000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Typical Turn-Off Delay Time:
- 62 ns
- Typical Turn-On Delay Time:
- 14 ns
- Width:
- 2.5 mm
- Part # Aliases:
- BSS225L6327HTSA1
- Unit Weight:
- 0.004603 oz
