- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- SOT-23-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 20 V
- Id - Continuous Drain Current:
- 2.3 A
- Rds On - Drain-Source Resistance:
- 41 mOhms
- Vgs - Gate-Source Voltage:
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage:
- 550 mV
- Qg - Gate Charge:
- 1.7 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 500 mW
- Channel Mode:
- Enhancement
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Packaging:
- MouseReel
- Brand:
- Infineon Technologies
- Configuration:
- Single
- Fall Time:
- 3.7 ns
- Forward Transconductance - Min:
- 9 S
- Height:
- 1.1 mm
- Length:
- 2.9 mm
- Product Type:
- MOSFET
- Rise Time:
- 9.9 ns
- Series:
- BSS806
- Factory Pack Quantity:
- 3000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Typical Turn-Off Delay Time:
- 12 ns
- Typical Turn-On Delay Time:
- 7.5 ns
- Width:
- 1.3 mm
- Part # Aliases:
- BSS806NE H6327 SP000999336
- Unit Weight:
- 0.000282 oz
