- Manufacturer:
- Diodes Incorporated
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- SOT-363-6
- Transistor Polarity:
- N-Channel, P-Channel
- Number of Channels:
- 2 Channel
- Vds - Drain-Source Breakdown Voltage:
- 70 V, 50 V
- Id - Continuous Drain Current:
- 115 mA
- Rds On - Drain-Source Resistance:
- 4.4 Ohms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 200 mW
- Channel Mode:
- Enhancement
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Brand:
- Diodes Incorporated
- Configuration:
- Dual
- Forward Transconductance - Min:
- 0.08 S, 0.05 S
- Height:
- 1 mm
- Length:
- 2.2 mm
- Product:
- MOSFET Small Signal
- Product Type:
- MOSFET
- Series:
- BSS8402DW
- Factory Pack Quantity:
- 3000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel, 1 P-Channel
- Type:
- FET
- Typical Turn-Off Delay Time:
- 11 ns, 18 ns
- Typical Turn-On Delay Time:
- 7 ns, 10 ns
- Width:
- 1.35 mm
- Unit Weight:
- 0.000265 oz