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BSS8402DW-7-F original picture
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BSS8402DW-7-F thumbnail  picture
*Images are for reference only.

BSS8402DW-7-F

MOSFET 60 / -50V 200mW

Manufacturer:
Diodes Incorporated
Package:
SOT-363-6
Packing:
Reel
Datasheet:
BSS8402DW-7-F
Delivery services:
Payment method:
In stock:
1939
Order quantity:

Specifications

Manufacturer:
Diodes Incorporated
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-363-6
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
2 Channel
Vds - Drain-Source Breakdown Voltage:
60 V, 50 V
Id - Continuous Drain Current:
115 mA, 130 mA
Rds On - Drain-Source Resistance:
7.5 Ohms, 10 Ohms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
1 V, 800 mV
Qg - Gate Charge:
-
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
200 mW
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Diodes Incorporated
Configuration:
Dual
Forward Transconductance - Min:
0.08 S, 0.05 S
Height:
1 mm
Length:
2.2 mm
Product:
MOSFET Small Signal
Product Type:
MOSFET
Series:
BSS84
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel, 1 P-Channel
Type:
Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time:
11 ns, 18 ns
Typical Turn-On Delay Time:
7 ns, 10 ns
Width:
1.35 mm
Unit Weight:
0.000265 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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