- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- GaN
- Mounting Style:
- Through Hole
- Package / Case:
- TO-220-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 200 V
- Id - Continuous Drain Current:
- 9.5 A
- Rds On - Drain-Source Resistance:
- 400 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 75 W
- Channel Mode:
- Enhancement
- Packaging:
- Tube
- Brand:
- Infineon Technologies
- Configuration:
- Single
- Fall Time:
- 30 ns
- Height:
- 15.65 mm
- Length:
- 10 mm
- Product Type:
- MOSFET
- Rise Time:
- 40 ns
- Factory Pack Quantity:
- 500
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Typical Turn-Off Delay Time:
- 55 ns
- Typical Turn-On Delay Time:
- 10 ns
- Width:
- 4.4 mm
- Part # Aliases:
- BUZ32XK
- Unit Weight:
- 0.068784 oz
