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CSD88539ND original picture
CSD88539ND medium  picture
CSD88539ND thumbnail  picture
*Images are for reference only.

CSD88539ND

MOSFET 60-V Dual N-Channel Power MOSFET

Manufacturer:
Texas Instruments
Package:
SOIC-8
Packing:
Reel
Datasheet:
CSD88539ND
Delivery services:
Payment method:
In stock:
2873
Order quantity:

Specifications

Manufacturer:
Texas Instruments
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOIC-8
Transistor Polarity:
N-Channel
Number of Channels:
2 Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
15 A
Rds On - Drain-Source Resistance:
28 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2.6 V
Qg - Gate Charge:
7.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.1 W
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Texas Instruments
Configuration:
Dual
Fall Time:
4 ns
Height:
1.75 mm
Length:
4.9 mm
Product Type:
MOSFET
Rise Time:
9 ns
Series:
CSD88539ND
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Transistor Type:
2 N-Channel Power MOSFET
Typical Turn-Off Delay Time:
14 ns
Typical Turn-On Delay Time:
5 ns
Width:
3.9 mm
Unit Weight:
0.002610 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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