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DMC1229UFDB-13 original picture
DMC1229UFDB-13 medium  picture
DMC1229UFDB-13 thumbnail  picture
*Images are for reference only.

DMC1229UFDB-13

MOSFET Comp ENH Mode FET 12V Vdss 8V VGss

Manufacturer:
Diodes Incorporated
Package:
DFN2020-B-6
Packing:
Reel
Datasheet:
DMC1229UFDB-13
Delivery services:
Payment method:
In stock:
2447
Order quantity:

Specifications

Manufacturer:
Diodes Incorporated
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DFN2020-B-6
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
2 Channel
Vds - Drain-Source Breakdown Voltage:
12 V
Id - Continuous Drain Current:
5.6 A, 3.8 A
Rds On - Drain-Source Resistance:
17 mOhms, 37 mOhms
Vgs - Gate-Source Voltage:
- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:
400 mV, 1 V
Qg - Gate Charge:
19.6 nC, 17.9 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.4 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Diodes Incorporated
Configuration:
Dual
Fall Time:
4.1 ns, 26.4 ns
Forward Transconductance - Min:
-
Product Type:
MOSFET
Rise Time:
10.5 ns,11.5 ns
Series:
DMC1229
Factory Pack Quantity:
10000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:
16.6 ns, 27.8 ns
Typical Turn-On Delay Time:
5 ns, 5.7 ns
Unit Weight:
0.000229 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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