Wed, Jun29,14:37:12 GMT+8
English
USD

English

Chinese

Japanese

Korean

Russian

IC
IC
*Images are for reference only.

DMN3110S-7

MOSFET N-CH 30V 2.5A SOT-23

Manufacturer:
Diodes Incorporated
Package:
TO-236-3, SC-59, SOT-23-3
Packing:
Datasheet:
DMN3110S-7
Delivery services:
Payment method:
In stock:
24864
Order quantity:

Specifications

Part Number
DMN3110S-7
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 30V 2.5A SOT-23
Package
TO-236-3, SC-59, SOT-23-3
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
305.8pF @ 15V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
740mW (Ta)
Rds On (Max) @ Id, Vgs
73 mOhm @ 3.1mA, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23
Package / Case
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

Products Recommended

  • Part Number
  • Manufacturer
  • Description
  • Packaging
  • In Stock
  • Order quantity
  • Rohm Semiconductor
  • MOSFET N-CH 1700V 3.7A
  • Tube
  • 22524
  •  
  • IXYS
  • MOSFET P-CH 85V 96A TO-220
  • 20544
  •  
  • EPC
  • TRANS GAN 80V 31A BUMPED DIE
  • 32184
  •  
  • Alpha & Omega Semiconductor Inc.
  • MOSFET N-CH 600V 39A TO220
  • 18510
  •  
  • STMicroelectronics
  • MOSFET N-CH 650V 32A TO220
  • 7712
  •  
The cookie settings on this website are set to 'allow all cookies' to give you the very best experience. Please click Accept Cookies to continue to use the site.