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DN3135N8-G original picture
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DN3135N8-G thumbnail  picture
*Images are for reference only.

DN3135N8-G

MOSFET 350V 35Ohm View in Development Tools Selector

Manufacturer:
Microchip Technology
Package:
SOT-89-3
Packing:
Reel
Datasheet:
DN3135N8-G
Delivery services:
Payment method:
In stock:
2094
Order quantity:

Specifications

Manufacturer:
Microchip
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-89-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
350 V
Id - Continuous Drain Current:
135 mA
Rds On - Drain-Source Resistance:
35 Ohms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Qg - Gate Charge:
-
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.3 W
Channel Mode:
Depletion
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Microchip Technology
Configuration:
Single
Fall Time:
20 ns
Forward Transconductance - Min:
140 mS
Height:
1.6 mm
Length:
4.6 mm
Product:
MOSFET Small Signal
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Type:
FET
Typical Turn-Off Delay Time:
15 ns
Typical Turn-On Delay Time:
10 ns
Width:
2.6 mm
Unit Weight:
0.001862 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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