EMZ8T2R

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

Mounting Style:

SMD/SMT

Transistor Polarity:

NPN, PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

50 V, 12 V

Collector- Base Voltage VCBO:

60 V, 15 V

Emitter- Base Voltage VEBO:

7 V, 6 V

Collector-Emitter Saturation Voltage:

400 mV, 250 mV

Maximum DC Collector Current:

150 mA, 500 mA

Pd - Power Dissipation:

150 mW

Gain Bandwidth Product fT:

260 MHz, 180 MHz

Minimum Operating Temperature:

-

Maximum Operating Temperature:

+ 150 C

Series:

EMZ8

Packaging:

Reel

Packaging:

Cut Tape

Packaging:

MouseReel

Brand:

ROHM Semiconductor

DC Collector/Base Gain hfe Min:

120

DC Current Gain hFE Max:

120 at 1 mA, 6 V

Height:

0.5 mm

Length:

1.6 mm

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

8000

Subcategory:

Transistors

Technology:

Si

Width:

1.2 mm

Part # Aliases:

EMZ8