- Part Number
- EPC2101ENGRT
- Manufacturer
- EPC
- Description
- TRANS GAN ASYMMETRICAL HALF BRID
- Package
- Die
- FET Feature
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 9.5A, 38A
- Rds On (Max) @ Id, Vgs
- 11.5 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id
- 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs
- 2.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds
- 300pF @ 30V
- Power - Max
- -
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Supplier Device Package
