- Manufacturer:
- onsemi
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- Through Hole
- Package / Case:
- TO-220-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 650 V
- Id - Continuous Drain Current:
- 20.2 A
- Rds On - Drain-Source Resistance:
- 199 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 2.5 V
- Qg - Gate Charge:
- 74 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 208 W
- Channel Mode:
- Enhancement
- Tradename:
- SuperFET II
- Packaging:
- Tube
- Brand:
- onsemi / Fairchild
- Configuration:
- Single
- Height:
- 16.3 mm
- Length:
- 10.67 mm
- Product Type:
- MOSFET
- Series:
- FCP190N60
- Factory Pack Quantity:
- 800
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Width:
- 4.7 mm
- Unit Weight:
- 0.068784 oz
