The FDB075N15A is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild Semiconductor. It is designed for high-performance switching applications where low on-state resistance and fast switching characteristics are required.
Here are some key features of the FDB075N15A:
1. Power MOSFET: The FDB075N15A is a N-channel enhancement mode MOSFET, commonly used for high-side or low-side switching applications.
2. Low On-Resistance: It has a low on-state resistance (RDS(on)) of typically 0.0085 ohms, allowing for efficient power switching and reduced power dissipation.
3. High Current Handling: The MOSFET can handle a maximum continuous drain current (ID) of 75 amperes, enabling it to handle high current loads.
4. High Voltage Capability: It has a maximum drain-source voltage (VDS) rating of 150 volts, making it suitable for various high-voltage applications.
5. Fast Switching Speed: The FDB075N15A offers fast switching characteristics, with a low gate charge and low input capacitance, allowing for quick switching transitions.
6. Avalanche Rated: It is avalanche rated, providing ruggedness against high energy and voltage spikes during switching events.
7. Package Type: The FDB075N15A is available in a TO-263 (D2PAK) package, which provides a good balance between thermal performance and ease of mounting.
The FDB075N15A is commonly used in applications such as power supplies, motor control, LED lighting, DC-DC converters, and other high-power switching applications. Its low on-state resistance, high current handling, and fast switching characteristics make it suitable for demanding power management requirements.
For more detailed information on electrical characteristics, thermal considerations, and application-specific details, I recommend referring to the datasheet and technical documentation provided by Fairchild Semiconductor for the FDB075N15A.
