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FDC3601N original picture
FDC3601N medium  picture
FDC3601N thumbnail  picture
*Images are for reference only.

FDC3601N

MOSFET Dual N-Ch 100V Spec Power Trench

Manufacturer:
onsemi
Package:
SSOT-6
Packing:
Reel
Datasheet:
FDC3601N
Delivery services:
Payment method:
In stock:
1929
Order quantity:

Specifications

Manufacturer:
onsemi
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SSOT-6
Transistor Polarity:
N-Channel
Number of Channels:
2 Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
1 A
Rds On - Drain-Source Resistance:
500 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2 V
Qg - Gate Charge:
5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
960 mW
Channel Mode:
Enhancement
Tradename:
PowerTrench
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
-
Brand:
onsemi
Configuration:
Dual
Fall Time:
4 ns
Forward Transconductance - Min:
3.6 S
Height:
1.1 mm
Length:
2.9 mm
Product:
MOSFET Small Signal
Product Type:
MOSFET
Rise Time:
4 ns
Series:
FDC3601N
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Transistor Type:
2 N-Channel
Type:
MOSFET
Typical Turn-Off Delay Time:
11 ns
Typical Turn-On Delay Time:
8 ns
Width:
1.6 mm
Part # Aliases:
FDC3601N_NL
Unit Weight:
0.001270 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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