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FDC6401N_Q original picture
FDC6401N_Q medium  picture
FDC6401N_Q thumbnail  picture
*Images are for reference only.

FDC6401N_Q

MOSFET Dual N-Ch 2.5V Spec Power Trench

Manufacturer:
onsemi / Fairchild
Package:
SSOT-6
Packing:
Reel
Datasheet:
FDC6401N_Q
Delivery services:
Payment method:
In stock:
3102
Order quantity:

Specifications

Manufacturer:
onsemi
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SSOT-6
Transistor Polarity:
N-Channel
Number of Channels:
2 Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
70 mOhms
Vgs - Gate-Source Voltage:
- 12 V, + 12 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
960 mW
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Brand:
onsemi / Fairchild
Configuration:
Dual
Fall Time:
7 ns
Height:
1.1 mm
Length:
2.9 mm
Product:
MOSFET Small Signal
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
15000
Subcategory:
MOSFETs
Transistor Type:
2 N-Channel
Type:
MOSFET
Typical Turn-Off Delay Time:
13 ns
Typical Turn-On Delay Time:
5 ns
Width:
1.6 mm
Unit Weight:
0.001270 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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