- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 120 V
- Current - Continuous Drain (Id) @ 25°C
- 18.5A (Ta), 114A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Rds On (Max) @ Id, Vgs
- 4mOhm @ 67A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 370A
- Gate Charge (Qg) (Max) @ Vgs
- 82 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 6460 pF @ 60 V
- Power Dissipation (Max)
- 2.7W (Ta), 106W (Tc)
- Operating Temperature
- -55°C ~ 150°C
- Mounting Type
- Surface Mount
