- Manufacturer:
- Infineon
- Product Category:
- IGBT Modules
- Product:
- IGBT Silicon Modules
- Configuration:
- Dual
- Collector- Emitter Voltage VCEO Max:
- 1200 V
- Collector-Emitter Saturation Voltage:
- 1.75 V
- Continuous Collector Current at 25 C:
- 450 A
- Gate-Emitter Leakage Current:
- 400 nA
- Pd - Power Dissipation:
- 1600 W
- Package / Case:
- 62 mm
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 150 C
- Packaging:
- Tray
- Brand:
- Infineon Technologies
- Maximum Gate Emitter Voltage:
- 20 V
- Mounting Style:
- Chassis Mount
- Product Type:
- IGBT Modules
- Series:
- Trench/Fieldstop IGBT4 - T4
- Factory Pack Quantity:
- 10
- Subcategory:
- IGBTs
- Technology:
- Si
- Part # Aliases:
- SP000370607 FF300R12KT4HOSA1
- Unit Weight:
- 11.816777 oz
