- Manufacturer:
- Infineon
- Product Category:
- IGBT Modules
- Product:
- IGBT Silicon Modules
- Configuration:
- Dual
- Collector- Emitter Voltage VCEO Max:
- 1200 V
- Collector-Emitter Saturation Voltage:
- 1.75 V
- Continuous Collector Current at 25 C:
- 995 A
- Gate-Emitter Leakage Current:
- 400 nA
- Pd - Power Dissipation:
- 4050 W
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 150 C
- Packaging:
- Tray
- Brand:
- Infineon Technologies
- Maximum Gate Emitter Voltage:
- 20 V
- Mounting Style:
- PCB Mount
- Product Type:
- IGBT Modules
- Factory Pack Quantity:
- 6
- Subcategory:
- IGBTs
- Part # Aliases:
- FF600R12ME4W_B73 SP005589477
