- Part Number
- FQB10N20LTM
- Manufacturer
- Fairchild/ON Semiconductor
- Description
- MOSFET N-CH 200V 10A D2PAK
- Package
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds
- 830pF @ 25V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 3.13W (Ta), 87W (Tc)
- Rds On (Max) @ Id, Vgs
- 360 mOhm @ 5A, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- D2PAK (TO-263AB)
- Package / Case
