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HGT1S10N120BNST original picture
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*Images are for reference only.

HGT1S10N120BNST

IGBT Transistors N-Channel IGBT NPT Series 1200V

Manufacturer:
onsemi / Fairchild
Package:
SC-70-3
Packing:
Reel
Datasheet:
HGT1S10N120BNST
Delivery services:
Payment method:
In stock:
3672
Order quantity:

Specifications

Manufacturer:
onsemi
Product Category:
IGBT Transistors
Technology:
Si
Package / Case:
SC-70-3
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.7 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
35 A
Pd - Power Dissipation:
298 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
HGT1S10N120BNS
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
onsemi / Fairchild
Continuous Collector Current:
55 A
Continuous Collector Current Ic Max:
35 A
Gate-Emitter Leakage Current:
+/- 250 nA
Height:
4.83 mm
Length:
10.67 mm
Product Type:
IGBT Transistors
Factory Pack Quantity:
800
Subcategory:
IGBTs
Width:
9.65 mm
Unit Weight:
0.046296 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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