- Manufacturer:
- Toshiba
- Product Category:
- Bipolar Transistors - BJT
- Mounting Style:
- SMD/SMT
- Package / Case:
- ES-6
- Transistor Polarity:
- NPN, PNP
- Configuration:
- Dual
- Collector- Emitter Voltage VCEO Max:
- 50 V
- Collector- Base Voltage VCBO:
- 50 V
- Emitter- Base Voltage VEBO:
- 5 V
- Collector-Emitter Saturation Voltage:
- 100 mV
- Pd - Power Dissipation:
- 100 mW
- Gain Bandwidth Product fT:
- 80 MHz
- Maximum Operating Temperature:
- + 150 C
- Qualification:
- AEC-Q200
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Packaging:
- MouseReel
- Brand:
- Toshiba
- Continuous Collector Current:
- 150 mA
- DC Collector/Base Gain hfe Min:
- 120 at 2 mA, 6 V
- DC Current Gain hFE Max:
- 400 at 2 mA, 6 V
- Product Type:
- BJTs - Bipolar Transistors
- Factory Pack Quantity:
- 4000
- Subcategory:
- Transistors
- Technology:
- Si
- Part # Aliases:
- HN1B04FE-Y,LXHF(B
