- Manufacturer:
- Toshiba
- Product Category:
- Bipolar Transistors - BJT
- Transistor Polarity:
- NPN, PNP
- Configuration:
- Dual
- Collector- Emitter Voltage VCEO Max:
- 50 V
- Collector- Base Voltage VCBO:
- 60 V
- Emitter- Base Voltage VEBO:
- 5 V
- Maximum DC Collector Current:
- 150 mA
- Pd - Power Dissipation:
- 100 mW
- Gain Bandwidth Product fT:
- 80 MHz
- Maximum Operating Temperature:
- + 150 C
- Series:
- HN4B01
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Brand:
- Toshiba
- DC Collector/Base Gain hfe Min:
- 120
- Product Type:
- BJTs - Bipolar Transistors
- Factory Pack Quantity:
- 4000
- Subcategory:
- Transistors
- Technology:
- Si
