- Part Number
- HTMN5130SSD-13
- Manufacturer
- Diodes Incorporated
- Description
- MOSFET 2N-CH 55V 2.6A 8SOIC
- Package
- 8-SOIC (0.154", 3.90mm Width)
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 2.6A
- Rds On (Max) @ Id, Vgs
- 130 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 8.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 218.7pF @ 25V
- Power - Max
- 1.7W
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
