The IPB017N06N3 G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed to handle high currents and voltages, making it suitable for power switching applications.
Here are some key features of the IPB017N06N3 G:
1. Power MOSFET: The IPB017N06N3 G is a N-channel MOSFET, which means it is controlled by the voltage applied to its gate terminal relative to its source terminal.
2. Low On-Resistance: It features a low on-resistance (RDS(on)) to minimize power losses and improve efficiency during conduction.
3. High Current Handling: The IPB017N06N3 G is capable of handling a continuous drain current of up to 110A, allowing it to handle high-power applications.
4. High Voltage Rating: It has a maximum drain-source voltage (VDS) rating of 60V, making it suitable for applications with higher voltage requirements.
5. Avalanche Energy Rating: The MOSFET has a specified avalanche energy rating, which represents its ability to withstand transient voltage spikes without damage.
6. Package Type: The "G" in the part number indicates the package type, which in this case is a TO-263 (D2PAK) package. The TO-263 package offers good thermal dissipation properties and is commonly used in power electronics applications.
The IPB017N06N3 G can be used in a wide range of applications, including power supplies, motor control, inverters, and other high-current switching applications. It is designed to provide efficient and reliable performance in demanding power electronics systems.
For detailed information on electrical characteristics, package dimensions, and other specifications, it is recommended to refer to the datasheet and technical documentation provided by Infineon Technologies for the IPB017N06N3 G.
