- Part Number
- IPB017N08N5ATMA1
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 80V 120A D2PAK
- Package
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 80V
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Vgs(th) (Max) @ Id
- 3.8V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs
- 223nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 16900pF @ 40V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 375W (Tc)
- Rds On (Max) @ Id, Vgs
- 1.7 mOhm @ 100A, 10V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO263-3
- Package / Case
