- Part Number
- IPB100N06S3L-03
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 55V 100A TO263-3-2
- Package
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Vgs(th) (Max) @ Id
- 2.2V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs
- 550nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 26240pF @ 25V
- Vgs (Max)
- ±16V
- FET Feature
- -
- Power Dissipation (Max)
- 300W (Tc)
- Rds On (Max) @ Id, Vgs
- 2.7 mOhm @ 80A, 10V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO263-3-2
- Package / Case