- Part Number
- IPB160N04S4H1ATMA1
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 40V 160A TO263-7
- Package
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs
- 137nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 10920pF @ 25V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 167W (Tc)
- Rds On (Max) @ Id, Vgs
- 1.6 mOhm @ 100A, 10V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO263-7-3
- Package / Case
