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IPD30N06S2L-23 original picture
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IPD30N06S2L-23

MOSFET N-Ch 55V 30A DPAK-2 OptiMOS

Manufacturer:
Infineon Technologies
Package:
TO-252-3
Packing:
Reel
Datasheet:
IPD30N06S2L-23
Delivery services:
Payment method:
In stock:
1950
Order quantity:

Specifications

Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
30 A
Rds On - Drain-Source Resistance:
15.9 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Qg - Gate Charge:
42 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
100 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Infineon Technologies
Configuration:
Single
Fall Time:
9 ns
Height:
2.3 mm
Length:
6.5 mm
Product Type:
MOSFET
Rise Time:
22 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
33 ns
Typical Turn-On Delay Time:
7 ns
Width:
6.22 mm
Part # Aliases:
SP000252168 IPD30N06S2L23ATMA1
Unit Weight:
0.011640 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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