IPD50P03P4L11ATMA2

Manufacturer:

Infineon

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3-11

Transistor Polarity:

P-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

50 A

Rds On - Drain-Source Resistance:

13 mOhms

Vgs - Gate-Source Voltage:

- 16 V, + 5 V

Vgs th - Gate-Source Threshold Voltage:

1.5 V

Qg - Gate Charge:

42 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

58 W

Channel Mode:

Enhancement

Packaging:

Reel

Packaging:

Cut Tape

Brand:

Infineon Technologies

Fall Time:

14 ns

Product Type:

MOSFET

Rise Time:

3 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Transistor Type:

1 P-Channel

Typical Turn-Off Delay Time:

45 ns

Typical Turn-On Delay Time:

7 ns

Part # Aliases:

IPD50P03P4L-11 SP002325738

Unit Weight:

0.011425 oz