- Part Number
- IPD60R180P7ATMA1
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 650V 18A TO252-3
- Package
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1081pF @ 400V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 72W (Tc)
- Rds On (Max) @ Id, Vgs
- 180 mOhm @ 5.6A, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO252-3
- Package / Case
